Carbon nanotube array, multi-walled
Synonym:
CNT array, MWCNT array
CAS Number:
308068-56-6
MDL number:
MFCD00133992
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
2 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
10 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
100 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
250 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
25 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
500 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
5 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 EA
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
1 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
100 MG
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
2 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Purity:
>95% carbon basis (x'=ray)
Packing size:
10 G
Form:
(1cm x 1cm Si wafer substrate, {100}, 300-550 μm thick, n-doped, resistivity 1-10 ohm-cm.)
Safety Information
Hazard Statements
H373
H317
H351
Precautionary Statements
P202
P280
P308 + P313
P302 + P352
P272
P260
Pictograms
